Extreme Ultraviolet Lithography Market - By Type (Low-NA EUV, High-NA EUV), By End User (Logic Foundry, DRAM, NAND, Research), By Application (2nm and Below, 3nm, 5nm, Advanced Packaging), By Region

The global extreme ultraviolet lithography market size was USD 12.90 Billion in 2025 and is expected to register a revenue CAGR of 13.2% during the forecast period. Extreme ultraviolet lithography uses 13.5-nanometre wavelength light generated from tin plasma illuminated by high-power CO2 lasers to pattern semiconductor wafers at feature sizes below 10 nanometres, replacing the multiple patterning exposure sequences required at longer wavelengths that add process steps, cost, and overlay error accumulation. EUV lithography systems operate in vacuum because EUV light is absorbed by air, and the optical system uses reflective Bragg multilayer mirrors rather than refractive lenses because no material transmits EUV wavelengths adequately. ASML Holding is the sole commercial EUV scanner manufacturer, having invested over USD 9 billion in EUV technology development since 1995 in partnership with Zeiss for the optical system and Cymer for the light source. ASML's NXE:3600D low-NA EUV scanner at 0.33 numerical aperture is the production workhorse at TSMC, Samsung, Intel, and SK Hynix, with the new EXE:5000 High-NA scanner at 0.55 numerical aperture delivering to Intel in 2024 for 18A process development representing the next generation of EUV capability. The EUV lithography market revenue is dominated by scanner unit sales at USD 180 to USD 380 million per system with additional field service, reticle handling equipment, and metrology revenue.

The EUV lithography market is driven by leading-edge semiconductor node advancement where EUV exposure steps are increasing from 7 to 9 per wafer at 5nm to 14 to 18 per wafer at 2nm and below, multiplying EUV scanner utilisation and driving additional scanner procurement at existing customers even before capacity expansion is considered. TSMC's N2 node entering risk production in 2024 with 16 EUV layers, Samsung's 2nm gate-all-around node with similar EUV exposure count, and Intel's 18A process with High-NA EUV integration are all requiring scanner purchases that are constrained by ASML's 90-system-per-year EUV production capacity. For instance, in January 2026, ASML Holding N.V., Netherlands, reported fiscal year 2025 revenue of EUR 28.3 billion, a 21 percent year-over-year increase, with EUV system revenue of EUR 16.2 billion driven by 73 NXE:3600D and EXE:5000 system deliveries and record EUV service and upgrade revenue, and guided for a revenue increase of 10 to 15 percent in fiscal year 2026 with High-NA EXE:5000 shipments expected to contribute EUR 3 to EUR 4 billion of incremental revenue. These are some of the key factors driving revenue growth of the market.

However, ASML's sole-source position creates a geopolitical sensitivity that has led the Dutch government, under US pressure, to restrict EUV scanner exports to China since 2019, preventing Chinese semiconductor manufacturers including CXMT and Yangtze Memory from accessing EUV lithography and effectively capping Chinese advanced semiconductor manufacturing capability at 28-nanometre process nodes. ASML's production capacity of approximately 90 EUV systems per year is a structural constraint on leading-edge semiconductor capacity expansion that cannot be quickly resolved because each EUV system requires 100,000 precision components from 5,000 suppliers whose production is also capacity-constrained. The High-NA EXE:5000 transition at Intel presents qualification risk because 0.55 NA optics require half-field exposure that doubles the exposure count per wafer and demands new mask architecture that has no prior production history at Intel's process flow. These factors substantially limit EUV lithography market growth over the forecast period.